生命周期: | Transferred | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.16 |
最长访问时间: | 100 ns | JESD-30 代码: | R-CDIP-T32 |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 256KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88257C100CM | WEDC |
获取价格 |
Standard SRAM, 256KX8, 100ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C70CB | WEDC |
获取价格 |
Standard SRAM, 256KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C70CC | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C70CC | WEDC |
获取价格 |
Standard SRAM, 256KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C70CI | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C70CI | WEDC |
获取价格 |
Standard SRAM, 256KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CB | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CB | WEDC |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CC | WEDC |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CC | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 |