Datasheet > 存储 > SRAM> EDI2CG472128V12D2

EDI2CG472128V12D2

更新时间： 2024-11-10 03:33:27

品牌	Logo	应用领域
WEDC		存储内存集成电路静态存储器
页数	文件大小	规格书
11页	191K
描述
4 Megabyte Sync/Sync Burst, Dual Key DIMM

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EDI2CG472128V

White Electronic Designs

ADVANCED*

4 Megabyte Sync/Sync Burst, Dual Key DIMM

FEATURES

DESCRIPTION

ꢀ

4x128Kx72 Synchronous, Synchronous Burst

Flow-Through Architecture

Linear and Sequential Burst Support via MODE pin

Clock Controlled Registered Module Enable (EM#)

Clock Controlled Registered Bank Enables (E1#, E2#,

E3#, E4#)

Clock Controlled Byte Write Mode Enable (BWE#)

Clock Controlled Byte Write Enables (BW1# - BW8#)

Clock Controlled Registered Address

Clock Controlled Registered Global Write (GW#)

Aysnchronous Output Enable (G#)

Internally Self-timed Write

Individual Bank Sleep Mode enables (ZZ₁, ZZ₂, ZZ₃, ZZ₄)

Gold Lead Finish

3.3V +10% Operation

The EDI2CG472128VxxD2 is a Synchronous/Synchronous

Burst SRAM, 84 position Dual Key; Double High DIMM (168

contacts) Module, organized as 4x128Kx72. The Module

contains eight (8) Synchronous Burst Ram Devices,

packaged in the industry standard JEDEC 14mmx20mm

TQFP placed on a Multilayer FR4 Substrate. The module

architecture is deﬁned as a Sync/Sync Burst, Flow-Through,

with support for either linear or sequential burst. This

module provides High Performance, 2-1-1-1 accesses

when used in Burst Mode, and used as a Synchronous

Only Mode, provides a high performance cost advantage

over BiCMOS aysnchronous device architectures.

ꢀ

Synchronous Only operations are performed via strapping

ADSC# Low, and ADSP# / ADV# High, which provides for

Ultra Fast Accesses in Read Mode while providing for

internally self-timed Early Writes.

Synchronous/Synchronous Burst operations are in relation

to an externally supplied clock, Registered Address,

Registered Global Write, Registered Enables as well as

an Asynchronous Output enable. This Module has been

deﬁned with full ﬂexibility, which allows individual control

of each of the eight bytes, as well as Quad Words in both

Read and Write Operations.

Access Speed(s): TKHQV=8.5, 10, 12, 15ns

Common Data I/O

High Capacitance (30pf) drive, at rated Access Speed

Single Total Array Clock

Multiple Vcc and Gnd

*This product is under development, is not qualiﬁed or characterized and is subject to

change or cancellation without notice.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

July 1999

Rev 1

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...11

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与EDI2CG472128V12D2相关器件

型号	品牌	获取价格	描述	数据表
EDI2CG472128V15D2	WEDC	获取价格	4 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472128V85D2	WEDC	获取价格	4 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472128V-D2	ETC	获取价格	SSRAM Modules
EDI2CG472256V	WEDC	获取价格	8 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472256V10D1	WEDC	获取价格	SRAM Module, 2MX8, 10ns, CMOS,
EDI2CG472256V10D2	WEDC	获取价格	8 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472256V12D1	WEDC	获取价格	SRAM Module, 2MX8, 12ns, CMOS,
EDI2CG472256V12D2	WEDC	获取价格	8 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472256V15D2	WEDC	获取价格	8 Megabyte Sync/Sync Burst, Dual Key DIMM
EDI2CG472256V9D1	WEDC	获取价格	SRAM Module, 2MX8, 9ns, CMOS,

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