Datasheet > EC731N80D

EC731N80D

更新时间： 2024-10-03 01:17:47

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
5页	243K
描述
800V, 1A N-Channel MOSFET

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EC731N80D 数据手册

EC731N80D

800V、1A N-Channel MOSFET

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high

repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use

in power switching application and a wide variety of other applications.

Features and Benefits:

◆ Advanced MOSFET process technology

◆ Special designed for PWM, load switching and

general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆150ꢃ operating temperature

TO-252

pin Assignment

Schematic diagram

Main Product Characteristics

800V

13ꢀ(typ.)

DSS

RDS(on)

Absolute max Rating

Symbol

Parameter

Continuous Drain Current, VGS @ 10Vꢀ

Max.

Units

@ TC = 25°C

@ TC = 100°C

0.75

Continuous Drain Current, VGS @ 10Vꢀ

Pulsed Drain Currentꢁ

Power Dissipationꢂ

W/°C

@TC = 25°C

Linear Derating Factor

0.36

Drain-Source Voltage

800

Gate-to-Source Voltage

± 30

Single Pulse Avalanche Energy @ L=100mH

Avalanche Current @ L=100mH

Operating Junction and Storage Temperature Range

-55 to + 150

°C

TSTG

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 5

4J01N-Rev.F002

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