Datasheet > EC732336

EC732336

更新时间： 2024-01-31 21:31:01

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	175K
描述
20V, 4.2A N-Channel MOSFET

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EC732336 数据手册

EC732336

20V、4.2A N-Channel MOSFET

Description

The EC732336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

Features and Benefits

▓ VDS = 20V,ID = 4.2A

DS(ON) < 80mꢀ @ VGS=2.5V

DS(ON) < 45mꢀ @ VGS=4.5V

▓ High Power and current handing capability

▓ Lead free product is acquired

▓ Surface Mount Package

Application

▓ Battery protection

▓ Load switch

▓ Power management

Package Marking and Ordering Information

Device Marking

Device

Device Package

2336

EC732336B1R

SOT23

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Limit

Unit

VDS

VGS

Gate-Source Voltage

±12

4.2

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

Maximum Power Dissipation

℃

1.25

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

Thermal Resistance

℃/W

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

140

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

5C31N-Rev.F001

12 3 4

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