Datasheet > EC7320NS60F

EC7320NS60F

更新时间： 2024-10-03 01:16:03

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	499K
描述
600V, 20A N-Channel MOSFET

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EC7320NS60F 数据手册

EC7320NS60F

600V、20A N-Channel MOSFET

Description

The EC7320NS60F series MOSFETs is a new technology, which combines an innovative super junction technology and

advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power

density and space saving.

Features and Benefits:

◆ High dv/dt and avalanche capabilities

◆ 100% avalanche tested

◆ Low input capacitance and gate charge

◆ Low gate input resistance

Main Product Characteristics

600V

170mΩ(typ.)

20A

VDSS

RDS(on)

SSF20NS60F

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

ID @ TC = 100°C

IDM

Continuous Drain Current, VGS @ 10V①

Pulsed Drain Current②

Power Dissipation③

34.7

0.27

600

W/°C

PD @TC = 25°C

Linear Derating Factor

Drain-Source Voltage

VDS

Gate-to-Source Voltage

±30

VGS

Single Pulse Avalanche Energy @ L=13.8mH

Avalanche Current @ L=13.8mH

248

EAS

IAR

Operating Junction and Storage Temperature Range

-55 to + 150

°C

TJ TSTG

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 6

4J01N-Rev.F002

12 3 4 5 6

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