Datasheet > EC732341E

EC732341E

更新时间： 2024-10-03 01:16:19

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	304K
描述
-20V, -4A P-Channel MOS

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EC732341E 数据手册

EC732341E

-20V、-4A P-Channel MOS

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive

avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power

switching application and a wide variety of other applications.

Features

◆ Advanced MOSFET process technology

◆ Special designed for PWM, load switching and general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature

Main Product Characteristics

-20V

VDSS

37mꢀ (typ.)

RDS(on)

-4A①

Absolute Maximum Ratings @T

A=25℃ unless otherwise specified

Symbol

Parameter

Max.

-4 ①

-2.4 ①

-30

Units

@ TC = 25°C Continuous Drain Current, VGS @ 10V

@ TC = 70°C Continuous Drain Current, VGS @ 10V

Pulsed Drain Current ②

Power Dissipation ③

@TC = 25°C

1.4

Drain-Source Voltage

Gate-to-Source Voltage

-20

±8

Operating Junction and Storage Temperature

Range

STG

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

°C /W

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 6

4L02N-Rev.F001

12 3 4 5 6

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