Datasheet > EC732N7002K

EC732N7002K

更新时间： 2024-01-21 02:08:19

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
7页	640K
描述
60V, 0.3A N-Channel MOSFET

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EC732N7002K 数据手册

EC732N7002K

60V、0.3A N-Channel MOSFET

General Features

◆VDS = 60V,ID = 0.3A

RDS(ON) < 3.5Ω @ VGS=5V

RDS(ON) < 3Ω @ VGS=10V

ESD Rating：1000V HBM

◆High Power and current handing capability

◆Lead free product is acquired

◆Surface Mount Package

Application

◆Direct Logic-Level Interface: TTL/CMOS

◆Drivers: Relays, Solenoids, Lamps,

Hammers,Display, Memories, Transistors, etc.

◆Battery Operated Systems

◆Solid-State Relays

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

±20

0.3

ID(70℃)

IDM

Drain Current-Continuous@ Current-Pulsed (Note 1)

0.26

0.8

Maximum Power Dissipation

0.43

℃

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

Thermal Characteristics

Parameter

Symbol

Limit

350

Unit

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

℃/W

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 7

4L11N-Rev.F001

12 3 4 5 6 7

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