Datasheet > EC732129H3M1T

EC732129H3M1T

更新时间： 2024-02-23 20:38:41

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
5页	406K
描述
-20V, -6A P-Channel MOS

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EC732129H3M1T 数据手册

EC732129H3

-20V、-6A P-Channel MOS

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.

Features

◆ Advanced MOSFET process technology

◆ Special designed for PWM, load switching and general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature

Main Product Characteristics

VDSS

RDS(on)

-20V

21mΩ (typ.)

-6.0A

SSF2129H3

ABSOLUTE MAXIMUM RATINGS

Symbol

ID @ TC = 25°C

IDM

Parameter

Max.

-6

Units

Continuous Drain Current, VGS @ 10V ①

Pulsed Drain Current ②

Power Dissipation ③

-24

2.0

W/°C

PD @TC = 25°C

Linear Derating Factor

Drain-Source Voltage

Gate-to-Source Voltage

0.016

-20

VDS

VGS

±8

TJ TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

RθJA

Junction-to-case③

—

℃/W

Junction-to-ambient (t≤10s) ④

℃/W

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 5

4J01N-Rev.F002

12 3 4 5

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