Datasheet > EC732320

EC732320

更新时间： 2024-01-10 01:36:43

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	247K
描述
20V, 800mA N-Channel MOSFET

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EC732320 数据手册

EC732320

20V、800mA N-Channel MOSFET

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high

repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use

in buttery protection, power switching application and a wide variety of other applications

Features and Benefits:

ꢀ Advanced trench MOSFET process technology

ꢀ Special designed for buttery protection, load

switching and general power management

ꢀ Ultra low on-resistance with low gate charge

ꢀ Fast switching and reverse body recovery

ꢀ 150ꢀ operating temperature

ꢀ Main Application: notebook, load switching, battery

protection, hand-held intstusment etc.

Main Product Characteristics

20V

DSS

300 mΩ(typ.)

800mA

DS(on)

Schematic diagram

Marking and pin

Assignment

SOT523

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Symbol

Limit

Unit

VDS

Gate-Source Voltage

±8

VGS

Drain Current-Continuous(Tc=25ꢀ)

Drain Current-Continuous(Tc=100ꢀ)

Drain Current-Pulsed (Note 1)

Maximum Power Dissipation

800

510

3.2

IDM

312

ꢀ

Operating Junction and Storage Temperature Range

-55 To 150

T ,TSTG

Thermal Resistance

Symbol

Characterizes

Thermal Resistance,Junction-to-Ambient (Note 2)

Typ.

Max.

400

Units

—

℃/W

RθJA

E-CMOS Corp. (www.ecmos.com.tw)

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4K24N-Rev.F001

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