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EC732N7002KU PDF预览

EC732N7002KU

更新时间: 2024-02-07 12:06:46
品牌 Logo 应用领域
飞虹 - E-CMOS /
页数 文件大小 规格书
6页 270K
描述
60V, 0.3A N-Channel MOSFET

EC732N7002KU 数据手册

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EC732N7002KU  
60V0.3A N-Channel MOSFET  
Description  
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive  
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power  
switching application and a wide variety of other applications.  
Features  
Advanced MOSFET process technology  
Special designed for PWM, load switching and  
general purpose applications  
Ultra low on-resistance with low gate charge  
Fast switching and reverse body recovery  
ESD Rating2000V HBM  
150operating temperature  
Main Product Characteristics  
V
DSS  
60V  
3(max.)  
0.3A  
R
DS(on)  
I
D
Absolute Maximum Ratings  
Symbol  
@ TC = 25°C  
Parameter  
Max.  
0.3  
1.2  
0.63  
60  
±20  
Units  
A
A
W
V
V
I
I
P
V
V
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current②  
DM  
D
@TC = 25°C  
Power Dissipation③  
Drain-Source Voltage  
Gate-to-Source Voltage  
DS  
GS  
TJ  
TSTG  
Operating Junction and Storage Temperature Range  
-55 to +150  
Thermal Characteristics  
Typ.  
Symbol  
Symbol  
Max.  
Units  
R
θJA  
Junction-to-ambientt10 S  
200  
/W  
E-CMOS Corp. (www.ecmos.com.tw)  
Page 1 of 6  
4L17N-Rev.F001  

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