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EBD52UC8AMFA-5B PDF预览

EBD52UC8AMFA-5B

更新时间: 2024-10-28 06:55:27
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
18页 156K
描述
512MB Unbuffered DDR SDRAM DIMM

EBD52UC8AMFA-5B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM184
针数:184Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.92访问模式:DUAL BANK PAGE BURST
最长访问时间:0.7 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):200 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N184JESD-609代码:e0
内存密度:4294967296 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:184
字数:67108864 words字数代码:64000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM184
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):235电源:2.6 V
认证状态:Not Qualified刷新周期:8192
自我刷新:YES最大待机电流:0.16 A
子类别:DRAMs最大压摆率:2.76 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.6 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EBD52UC8AMFA-5B 数据手册

 浏览型号EBD52UC8AMFA-5B的Datasheet PDF文件第12页浏览型号EBD52UC8AMFA-5B的Datasheet PDF文件第13页浏览型号EBD52UC8AMFA-5B的Datasheet PDF文件第14页浏览型号EBD52UC8AMFA-5B的Datasheet PDF文件第15页浏览型号EBD52UC8AMFA-5B的Datasheet PDF文件第16页浏览型号EBD52UC8AMFA-5B的Datasheet PDF文件第18页 
EBD52UC8AMFA-5  
CAUTION FOR HANDLING MEMORY MODULES  
When handling or inserting memory modules, be sure not to touch any components on the modules, such as  
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on  
these components to prevent damaging them.  
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,  
which would be electrical defects.  
When re-packing memory modules, be sure the modules are not touching each other.  
Modules in contact with other modules may cause excessive mechanical stress, which may damage the  
modules.  
MDE0202  
NOTES FOR CMOS DEVICES  
PRECAUTION AGAINST ESD FOR MOS DEVICES  
1
Exposing the MOS devices to a strong electric field can cause destruction of the gate  
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop  
generation of static electricity as much as possible, and quickly dissipate it, when once  
it has occurred. Environmental control must be adequate. When it is dry, humidifier  
should be used. It is recommended to avoid using insulators that easily build static  
electricity. MOS devices must be stored and transported in an anti-static container,  
static shielding bag or conductive material. All test and measurement tools including  
work bench and floor should be grounded. The operator should be grounded using  
wrist strap. MOS devices must not be touched with bare hands. Similar precautions  
need to be taken for PW boards with semiconductor MOS devices on it.  
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES  
No connection for CMOS devices input pins can be a cause of malfunction. If no  
connection is provided to the input pins, it is possible that an internal input level may be  
generated due to noise, etc., hence causing malfunction. CMOS devices behave  
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed  
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected  
to VDD or GND with a resistor, if it is considered to have a possibility of being an output  
pin. The unused pins must be handled in accordance with the related specifications.  
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES  
Power-on does not necessarily define initial status of MOS devices. Production process  
of MOS does not define the initial operation status of the device. Immediately after the  
power source is turned ON, the MOS devices with reset function have not yet been  
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or  
contents of registers. MOS devices are not initialized until the reset signal is received.  
Reset operation must be executed immediately after power-on for MOS devices having  
reset function.  
CME0107  
Preliminary Data Sheet E0455E10 (Ver. 1.0)  
17  

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