Datasheet > DSC2P0100L

DSC2P0100L

更新时间： 2024-09-14 20:02:39

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	507K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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DSC2P0100L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

DSC2P0100L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSC2P01

Silicon NPN epitaxial planar type

For low frequency ampliﬁcation

Darlington connection

DSC8P01 in Mini3 type package

 Package

ꢀCode

 Features

 High forward current transfer ratio h_FEwith excellent linearity

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

Mini3-G3-B-B

ꢀPin Name

1. Base

 Packaging

2. Emitter

3. Collector

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Marking Symbol: E5

ꢀInternal Connection

 Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

500

°C

Peak collector current

I_CP

750

Total power dissipation

P_T

200

Junction temperature

T_j

150

Storage temperature

stg

–55 to +150

°C

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

V_CBOI_C= 100 mA, I_E= 0

V_CEOI_C= 1 mA, I_B= 0

V_EBOI_E= 100 mA, I_C= 0

I_CBO

I_EBO

h_FE

V_CB= 25 V, I_E= 0

100



V_EB= 4 V, I_C= 0

1, 2

Forward current transfer ratio ^*

V_CE= 10 V, I_C= 500 mA

4000

20000

2.5

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= 500 mA, I_B= 0.5 mA

V_BE(sat)I_C= 500 mA, I_B= 0.5 mA

Base-emitter saturation voltage ^*

3.0

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classiﬁcation

Code

Rank

h_FE

4000 to 10000 8000 to 20000

E5Q E5R

Marking Symbol

Publication date: January 2011

Ver. CED

12 3 4

中文翻译

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与DSC2P0100L相关器件

型号	品牌	获取价格	描述	数据表
DSC2P01Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSC2P01Q0L	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
DSC2P01R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSC2P01R0L	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
DSC3001	MICREL	获取价格	Low-Power Ultra-Miniature Oscillator
DSC300100L	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSC3001HE1XXX.XXXXT	MICREL	获取价格	Low-Power Ultra-Miniature Oscillator
DSC3001HE2-001.0000T	MICROCHIP	获取价格	CRYSTAL OSCILLATOR, CLOCK, CMOS OUTPUT
DSC3001HE2-150.0000T	MICROCHIP	获取价格	CRYSTAL OSCILLATOR, CLOCK, CMOS OUTPUT
DSC3001HE25XXX.XXXXT	MICREL	获取价格	Low-Power Ultra-Miniature Oscillator

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