是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP16,.3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.68 | Is Samacsys: | N |
输入特性: | DIFFERENTIAL | 接口集成电路类型: | LINE RECEIVER |
接口标准: | GENERAL PURPOSE | JESD-30 代码: | R-GDIP-T16 |
JESD-609代码: | e0 | 长度: | 19.43 mm |
标称负供电电压: | -5 V | 功能数量: | 4 |
端子数量: | 16 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出低电流: | 0.016 A |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | +-5 V |
认证状态: | Not Qualified | 最大接收延迟: | 25 ns |
接收器位数: | 1 | 座面最大高度: | 5.08 mm |
子类别: | Line Driver or Receivers | 最大压摆率: | 60 mA |
最大供电电压: | 5.5 V | 最小供电电压: | 4.5 V |
标称供电电压: | 5 V | 电源电压1-最大: | -5.5 V |
电源电压1-分钟: | -4.5 V | 电源电压1-Nom: | -5 V |
表面贴装: | NO | 技术: | TTL |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DS1650J/883B | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650J/883C | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650J/A+ | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650Y-100 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 100ns, CMOS, | |
DS1650Y-100-IND | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 100ns, CMOS, | |
DS1650Y-70 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 70ns, CMOS, | |
DS1650Y-70-IND | ETC |
获取价格 |
NVRAM (Battery Based) | |
DS1650Y-85 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, | |
DS1650Y-85-IND | MAXIM |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
DS1650Y-85-IND | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, |