是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP16,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | JESD-30 代码: | R-XDIP-T16 |
JESD-609代码: | e0 | 标称负供电电压: | -5 V |
端子数量: | 16 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出低电流: | 0.016 A |
封装主体材料: | CERAMIC | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | +-5 V |
认证状态: | Not Qualified | 最大接收延迟: | 25 ns |
筛选级别: | 38535Q/M;38534H;883B | 子类别: | Line Driver or Receivers |
最大压摆率: | 60 mA | 标称供电电压: | 5 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DS1650J/883C | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650J/A+ | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650Y-100 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 100ns, CMOS, | |
DS1650Y-100-IND | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 100ns, CMOS, | |
DS1650Y-70 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 70ns, CMOS, | |
DS1650Y-70-IND | ETC |
获取价格 |
NVRAM (Battery Based) | |
DS1650Y-85 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, | |
DS1650Y-85-IND | MAXIM |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
DS1650Y-85-IND | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, | |
DS1650YL-100 | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 100ns, CMOS, |