是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 零件包装代码: | SOIC |
包装说明: | LOW PROFILE, SMT-34 | 针数: | 34 |
Reach Compliance Code: | not_compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.64 |
Is Samacsys: | N | 最长访问时间: | 85 ns |
其他特性: | 10 YEAR DATA RETENTION | JESD-30 代码: | R-PDSO-U34 |
长度: | 24.5745 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | NON-VOLATILE SRAM MODULE | 内存宽度: | 8 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 34 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ-I | 封装等效代码: | MODULE,34LEAD,1.0 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 6.35 mm | 最大待机电流: | 0.005 A |
子类别: | SRAMs | 最大压摆率: | 0.085 mA |
最大供电电压 (Vsup): | 5.25 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | J INVERTED | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 21.5265 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DS1650ABL-85-IND | DALLAS |
获取价格 |
Non-Volatile SRAM Module, 512KX8, 85ns, CMOS, | |
DS1650ABLPM-100 | ETC |
获取价格 |
NVRAM (Battery Based) | |
DS1650ABLPM-70 | ETC |
获取价格 |
NVRAM (Battery Based) | |
DS1650ABLPM-70-IND | ETC |
获取价格 |
NVRAM (Battery Based) | |
DS1650D5S | MTU |
获取价格 |
DIESEL GENERATOR SET | |
DS1650J | NSC |
获取价格 |
Quad Differential Line Receivers | |
DS1650J | TI |
获取价格 |
QUAD LINE RECEIVER, CDIP16, CERAMIC, DIP-16 | |
DS1650J/883B | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650J/883C | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC | |
DS1650J/A+ | TI |
获取价格 |
IC,LINE RECEIVER,QUAD,BIPOLAR,DIFFERENTIAL,DIP,16PIN,CERAMIC |