Datasheet > DN2470

DN2470

更新时间： 2022-11-24 21:54:28

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	135K
描述
N-CHANNEL DEPLETION - MODE VERTICAL DMOS FET

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DN2470 数据手册

DN2470

Initial Release

N-Channel Depletion-Mode

Vertical DMOS FET

Features

General Description

This low threshold depletion-mode (normally-on)

transistor utilizes an advanced vertical DMOS

structure and Supertex's well-proven silicon-gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors and with the high input impedance and

positive temperature coefficient inherent in MOS

devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-

induced secondary breakdown.

ꢀ

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakages

Application

ꢀ

Normally-on switches

Solid state relays

Battery operated systems

Converters

Linear amplifiers

Constant current sources

Telecom

Supertex's vertical DMOS FET is ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Option

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

BV_DSX

BV_DGX

±20V

Gate-to-Source Voltage

Operating and Storage

Temperature

Soldering Temperature*

* Distance of 1.6mm from case for 10 seconds.

-55°C to +150°C

300°C

** “Green” Certified Package

Ordering Information

Order Number / Package

BV_DSX/ BV_DGX

R_DS(ON)(max)

I_DSS(typ)

TO-252

DN2470K4

DN2470K4-G **

700V

500mA

42Ω

NR011905

Rev. 1 011105

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