Datasheet > DMP3045LVT

DMP3045LVT

更新时间： 2023-12-06 20:10:54

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美台 - DIODES		/
页数	文件大小	规格书
7页	540K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMP3045LVT 数据手册

DMP3045LVT

0.1

0.08

0.06

0.04

0.02

1.8

1.6

1.4

1.2

I_D= -1mA

V_GS= -4.5V, I_D= -3.7A

I_D= -250μA

V_GS= -10V, I_D= -4.9A

0.8

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction Temperature

10000

1000

100

f = 1MHz

V_GS= 0V

C_iss

C_oss

T_J= 85^oC

T_J= 150^oC

T_J= 25^oC

T_J= -55^oC

T_J= 125^oC

C_rss

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

100

R_DS(ON)

Limited

P_W= 100µs

P_W= 1ms

P_W= 10ms

P_W= 100ms

V_DS= -15V, I_D= -4.9A

T_J(Max)= 150℃

T_C= 25℃

Single Pulse

DUT on 1*MRP

Board

P_W= 1s

P_W= 10s

0.1

0.01

V_GS= -10V

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Q_g(nC)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

4 of 7

www.diodes.com

November 2021

DMP3045LVT

Document number: DS42994 Rev. 4 - 2

1 2 345 6 7

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