是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 23 weeks |
风险等级: | 5.64 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 4.3 A |
最大漏源导通电阻: | 0.05 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
DMP3056L-7 | DIODES |
类似代替 |
Power Field-Effect Transistor, |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMP3056L-7 | DIODES |
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Power Field-Effect Transistor, | |
DMP3056LDM | DIODES |
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DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
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DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
DMP3056LSDQ-13 | DIODES |
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Power Field-Effect Transistor, | |
DMP3056LSS | DIODES |
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SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
DMP3056LSS-13 | DIODES |
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SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
DMP3056LSSQ | DIODES |
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SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |