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DMP3056LSD-13 PDF预览

DMP3056LSD-13

更新时间: 2024-11-27 09:54:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
4页 172K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP3056LSD-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT
包装说明:GREEN, PLASTIC, SOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:1.59
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:263687Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SO-8+Samacsys Released Date:2019-07-04 10:12:49
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):6.9 A最大漏极电流 (ID):6.9 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DMP3056LSD-13 数据手册

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DMP3056LSD  
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Dual P-Channel MOSFET  
Low On-Resistance  
Case: SOP-8L  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead  
frame. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072g (approximate)  
45m@ VGS = -10V  
65m@ VGS = -4.5V  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
SOP-8L  
D1  
D2  
S1  
D1  
G1  
S2  
G2  
D1  
D2  
D2  
G1  
G2  
S1  
S2  
TOP VIEW  
Internal Schematic  
TOP VIEW  
P-Channel MOSFET  
P-Channel MOSFET  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
VGSS  
±20  
Drain Current (Note 1)  
Steady  
State  
TA = 25°C  
TA = 70°C  
-6.9  
-5.8  
A
A
ID  
Pulsed Drain Current (Note 3)  
-24  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
2.5  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
50  
°C/W  
Rθ  
JA  
-55 to +150  
°C  
TJ, TSTG  
Notes:  
1. Device mounted on 2 oz., 1” x 1” Copper pads on 2” x 2” FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width 10μS, Duty Cycle 1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 4  
www.diodes.com  
September 2008  
© Diodes Incorporated  
DMP3056LSD  
Document number: DS31420 Rev. 6 - 2  

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