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DMP3098L-7 PDF预览

DMP3098L-7

更新时间: 2024-01-15 23:27:14
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
5页 99K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

DMP3098L-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.61
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):3.8 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):147 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.08 W
最大脉冲漏极电流 (IDM):11 A认证状态:Not Qualified
参考标准:AEC-Q101表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):54.2 ns
最大开启时间(吨):22 nsBase Number Matches:1

DMP3098L-7 数据手册

 浏览型号DMP3098L-7的Datasheet PDF文件第2页浏览型号DMP3098L-7的Datasheet PDF文件第3页浏览型号DMP3098L-7的Datasheet PDF文件第4页浏览型号DMP3098L-7的Datasheet PDF文件第5页 
DMP3098L  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance:  
Case: SOT-23  
70m@ VGS = -10V, ID = -3.8A  
120m@ VGS = -4.5V, ID = -3.0A  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.008 grams (approximate)  
Qualified to AEC-Q101 Standards for High Reliability  
SOT-23  
Drain  
D
Gate  
S
G
Source  
TOP VIEW  
EQUIVALENT CIRCUIT  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
T
A = 25°C  
Steady  
State  
-3.8  
-2.9  
A
A
Drain Current (Note 1) VGS = -10V  
Pulsed Drain Current (Note 3)  
ID  
TA = 70°C  
-11  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
1.08  
Units  
W
PD  
115  
°C/W  
°C  
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
T
J, TSTG  
Notes:  
1. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t 5 sec.  
2. No purposefully added lead.  
3. Pulse width 10μS, Duty Cycle 1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 5  
www.diodes.com  
June 2010  
© Diodes Incorporated  
DMP3098L  
Document number: DS31447 Rev. 5 - 2  

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