Datasheet > DMP3160L

DMP3160L

更新时间： 2024-11-05 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	105K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMP3160L 数据手册

DMP3160L

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Low On-Resistance:

•

Case: SOT-23

R_DS(ON)< 122mΩ @ V_GS= -10V, I_D= -2.7A

R_DS(ON)< 190mΩ @ V_GS= -4.5V, I_D= -2.0A

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Device (Notes 2, 4 and 6)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

Drain

SOT-23

Gate

Source

EQUIVALENT CIRCUIT

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Units

Gate-Source Voltage

±20

V_GSS

_A= 25°C

_A= 70°C

Steady

State

-2.7

-2

Drain Current (Note 1) V_GS= -10V

Pulsed Drain Current (Note 3)

I_D

-8

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

P_D

Value

1.08

Units

115

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

T_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Min

Typ

Max

Unit

Test Condition

-30

BV_DSS

I_DSS

⎯

-800

V_GS= 0V, I_D= -250μA

V_DS= -30V, V_GS= 0V

V_GS= ±12V, V_DS= 0V

V_GS= ±15V, V_DS= 0V

⎯

±80

±800

Gate-Source Leakage

I_GSS

⎯

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-1.3

-1.8

-2.1

V_GS(th)

V_DS= V_GS, I_D= -250μA

V_GS= -10V, I_D= -2.7A

V_GS= -4.5V, I_D= -2.0A

V_DS= -5V, I_D= -2.7A

V_GS= 0V, I_S= -2.7A

165

122

190

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

mΩ

Forward Transfer Admittance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

3.6

|Y_fs|

V_SD

⎯

-1.26

⎯

227

C_iss

C_oss

C_rss

⎯

_DS= -10V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Notes:

1. Device mounted on FR-4 PCB. t ≤5 sec.

2. No purposefully added lead. Halogen and Antimony Free.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb₂O₃Fire Retardants.

1 of 4

www.diodes.com

June 2010

DMP3160L

Document number: DS31268 Rev. 5 - 2

12 3 4

中文翻译

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与DMP3160L相关器件

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