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DMP3100L-7

更新时间： 2024-11-05 12:20:07
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美台 - DIODES /
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描述
P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3100L-7 数据手册

 浏览型号DMP3100L-7的Datasheet PDF文件第2页浏览型号DMP3100L-7的Datasheet PDF文件第3页浏览型号DMP3100L-7的Datasheet PDF文件第4页 
DMP3100L  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
•
Low On-Resistance:  
•
•
Case: SOT-23  
100mΩ @ VGS = -10V, ID = -2.7A  
170mΩ @ VGS = -4.5V, ID = -2.0A  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
•
•
•
•
•
•
•
•
•
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability  
Drain  
SOT-23  
D
Gate  
S
G
Source  
EQUIVALENT CIRCUIT  
TOP VIEW  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
T
A = 25°C  
Steady  
State  
-2.7  
-2  
A
A
Drain Current (Note 1) VGS = -10V  
Pulsed Drain Current (Note 3)  
ID  
TA = 70°C  
-8  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
1.08  
Units  
W
PD  
115  
°C/W  
°C  
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
T
J, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-30  
V
BVDSS  
IDSS  
⎯
⎯
⎯
-800  
VGS = 0V, ID = -250μA  
VDS = -30V, VGS = 0V  
VGS = ±12V, VDS = 0V  
nA  
⎯
±80  
±800  
Gate-Source Leakage  
nA  
IGSS  
⎯
⎯
V
GS = ±15V, VDS = 0V  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
-1.3  
-1.8  
-2.1  
V
VGS(th)  
VDS = VGS, ID = -250μA  
VGS = -10V, ID = -2.7A  
VGS = -4.5V, ID = -2.0A  
VDS = -5V, ID = -2.7A  
VGS = 0V, IS = -2.7A  
86  
147  
100  
170  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
mΩ  
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
3.6  
S
V
|Yfs|  
VSD  
⎯
⎯
⎯
-1.26  
⎯
227  
64  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -10V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
36  
Notes:  
1. Device mounted on FR-4 PCB. t ≤5 sec.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
June 2010  
© Diodes Incorporated  
DMP3100L  
Document number: DS31441 Rev. 3 - 2  
1234

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