Datasheet > DMP3120L

DMP3120L

更新时间： 2022-04-19 18:55:09

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
2页	255K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET Low Gate Threshold Voltage

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Product specification

DMP3120L

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance:

•

Case: SOT-23

R_DS(ON)< 120mΩ @ V_GS= -4.5V

R_DS(ON)< 240mΩ @ V_GS= -2.5V

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 3)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

Drain

SOT-23

Gate

Source

Equivalent Circuit

Top View

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Drain Source Voltage

Symbol

V_DSS

Value

-30

Unit

Gate-Source Voltage

V_GSS

±12

Drain Current (Note 1)

T_A= 25°C

T_A= 70°C

Pulsed

-2.8

-2.2

I_D

Drain Current (Note 1)

-9

I_DM

I_S

Body-Diode Continuous Current (Note 1)

-2.0

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

1.4

Unit

P_D

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

T_J,T_STG

Notes:

1. Device mounted on FR-4 PCB. t ≤5 sec.

2. No purposefully added lead.

http://www.twtysemi.com

sales@twtysemi.com

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