DMP3056LSD

更新时间： 2024-11-24 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	172K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMP3056LSD 数据手册

DMP3056LSD

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Dual P-Channel MOSFET

Low On-Resistance

•

Case: SOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072g (approximate)

•

45mΩ @ V_GS= -10V

65mΩ @ V_GS= -4.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

SOP-8L

D₁

D₂

G₁

G₂

S₁

S₂

TOP VIEW

Internal Schematic

TOP VIEW

P-Channel MOSFET

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Units

Gate-Source Voltage

V_GSS

±20

Drain Current (Note 1)

Steady

State

T_A= 25°C

T_A= 70°C

-6.9

-5.8

I_D

Pulsed Drain Current (Note 3)

-24

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

2.5

Unit

P_D

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

°C/W

R_θ

-55 to +150

°C

T_J,T_STG

Notes:

1. Device mounted on 2 oz., 1” x 1” Copper pads on 2” x 2” FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 4

www.diodes.com

September 2008

DMP3056LSD

Document number: DS31420 Rev. 6 - 2

12 3 4

中文翻译

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