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DMP3056LSD PDF预览

DMP3056LSD

更新时间: 2024-02-07 21:53:11
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 172K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMP3056LSD 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.45Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):5 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):13 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMP3056LSD 数据手册

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DMP3056LSD  
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Dual P-Channel MOSFET  
Low On-Resistance  
Case: SOP-8L  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead  
frame. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072g (approximate)  
45m@ VGS = -10V  
65m@ VGS = -4.5V  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
SOP-8L  
D1  
D2  
S1  
D1  
G1  
S2  
G2  
D1  
D2  
D2  
G1  
G2  
S1  
S2  
TOP VIEW  
Internal Schematic  
TOP VIEW  
P-Channel MOSFET  
P-Channel MOSFET  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-30  
Units  
V
V
Gate-Source Voltage  
VGSS  
±20  
Drain Current (Note 1)  
Steady  
State  
TA = 25°C  
TA = 70°C  
-6.9  
-5.8  
A
A
ID  
Pulsed Drain Current (Note 3)  
-24  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
2.5  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
50  
°C/W  
Rθ  
JA  
-55 to +150  
°C  
TJ, TSTG  
Notes:  
1. Device mounted on 2 oz., 1” x 1” Copper pads on 2” x 2” FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width 10μS, Duty Cycle 1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 4  
www.diodes.com  
September 2008  
© Diodes Incorporated  
DMP3056LSD  
Document number: DS31420 Rev. 6 - 2  

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