Datasheet > DMN53D0LW_15

DMN53D0LW_15

更新时间： 2022-02-26 10:43:47

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	243K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN53D0LW_15 数据手册

DMN53D0LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low On-Resistance

Low Input Capacitance

360mA

250mA

2.0Ω @ V_GS= 10V

3.0Ω @ V_GS= 5V

50V

Fast Switching Speed

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data



Case: SOT323

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Applications



DC-DC Converters



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc



Weight: 0.006 grams (approximate)

Drain

SOT323

Gate

Protection

Source

Diode

ESD PROTECTED

Top View

Pin Configuration

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN53D0LW-7

DMN53D0LW-13

Case

SOT323

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

MM5 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Shanghai A/T Site

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 5

www.diodes.com

November 2013

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

12 3 4 5

下载PDF

与DMN53D0LW_15相关器件

型号	品牌	描述	获取价格	数据表
DMN53D0LW-13	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMN53D0LW-7	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMN53D0U	DIODES	N-Channel MOSFET	获取价格
DMN53D0U_15	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
DMN53D0U-13	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
DMN53D0U-7	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格