5秒后页面跳转
DMN3032LFDB-13 PDF预览

DMN3032LFDB-13

更新时间: 2024-02-02 04:27:14
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
6页 473K
描述
Small Signal Field-Effect Transistor,

DMN3032LFDB-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, S-PDSO-N6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:23 weeks风险等级:5.75
其他特性:HIGH RELIABILITY外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):6.2 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N6
JESD-609代码:e4元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.7 W参考标准:AEC-Q101
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMN3032LFDB-13 数据手册

 浏览型号DMN3032LFDB-13的Datasheet PDF文件第2页浏览型号DMN3032LFDB-13的Datasheet PDF文件第3页浏览型号DMN3032LFDB-13的Datasheet PDF文件第4页浏览型号DMN3032LFDB-13的Datasheet PDF文件第5页浏览型号DMN3032LFDB-13的Datasheet PDF文件第6页 
DMN3032LFDB  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low On-Resistance  
ID max  
TA = +25°C  
V(BR)DSS  
RDS(ON) max  
Low Input Capacitance  
Fast Switching Speed  
6.2A  
5.2A  
30mΩ @ VGS = 10V  
42mΩ @ VGS = 4.5V  
Low Input/Output Leakage  
30V  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. "Green" Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Mechanical Data  
Description and Applications  
Case: U-DFN2020-6  
This MOSFET is designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making it  
ideal for high-efficiency power management applications.  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish NiPdAu Annealed over Copper Leadframe.  
Body Control Electronics  
Power Management Functions  
DC-DC Converters  
e4  
Solderable per MIL-STD-202, Method 208  
Terminals Connections: See Diagram Below  
Weight: 0.0065 grams (Approximate)  
D2  
D1  
U-DFN2020-6  
S2  
G2  
D2  
D1  
G1  
G2  
D1  
D2  
G1  
S1  
S2  
S1  
Bottom View  
Pin1  
Internal Schematic  
Ordering Information (Note 4)  
Part Number  
DMN3032LFDB-7  
DMN3032LFDB-13  
Case  
U-DFN2020-6  
U-DFN2020-6  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
U-DFN2020-6  
N5 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: C = 2015)  
N5  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2015  
2016  
2017  
2018  
2019  
2020  
2021  
Code  
C
D
E
F
G
H
I
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
September 2015  
© Diodes Incorporated  
DMN3032LFDB  
Document number: DS35730 Rev. 3 - 2  

与DMN3032LFDB-13相关器件

型号 品牌 获取价格 描述 数据表
DMN3032LFDB-7 DIODES

获取价格

Small Signal Field-Effect Transistor,
DMN3032LFDBQ DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3032LFDBQ-13 DIODES

获取价格

Small Signal Field-Effect Transistor,
DMN3032LFDBQ-7 DIODES

获取价格

Small Signal Field-Effect Transistor,
DMN3032LFDBWQ DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LDM DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LDM-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LSD DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3033LSD-13 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3033LSDQ DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET