Datasheet > DMG3415UFY4

DMG3415UFY4

更新时间： 2024-11-21 06:54:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	142K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMG3415UFY4 数据手册

DMG3415UFY4

P-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

•

Case: DFN2015H4-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

39mΩ @ V_GS= -4.5V

52mΩ @ V_GS= -2.5V

65mΩ @ V_GS= -1.8V

•

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

ESD Protected Up To 3kV

•

"Green" Device, Halogen and Antimony Free (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

ESD PROTECTED TO 3kV

TOP VIEW

BOTTOM VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-16

Units

Gate-Source Voltage

±8

V_GSS

_A= 25°C

_A= 70°C

Steady

State

-2.5

-2.2

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_D

-12

I_DM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

0.49

Unit

Power Dissipation (Note 3)

250.7

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C

Operating and Storage Temperature Range

R_θJA

-55 to +150

_J,T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

4. Repetitive rating, pulse width limited by junction temperature.

1 of 6

www.diodes.com

December 2009

DMG3415UFY4

Document number: DS31842 Rev. 4 - 2

12 3 4 5 6

中文翻译

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