Datasheet > DMG3420U-7

DMG3420U-7

更新时间： 2024-11-21 09:54:07

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美台 - DIODES		/
页数	文件大小	规格书
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描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册
替代型号

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DMG3420U-7 数据手册

DMG3420U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminals Connections: See Diagram Below

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

Drain

Gate

Source

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±12

V_GSS

_A= 25°C

Steady

State

5.47

3.43

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_D

T_A= 85°C

I_DM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

0.74

Unit

Power Dissipation (Note 3)

167

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 3)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J,T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

1 of 6

www.diodes.com

January 2010

DMG3420U

Document number: DS31867 Rev. 2 - 2

12 3 4 5 6

中文翻译

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DMG3420U-7 替代型号

型号	品牌	替代类型	描述	数据表
SI2312CDS-T1-GE3	VISHAY	功能相似	TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL

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