DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
Features
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DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
ID max
V(BR)DSS
RDS(on)
TA = 25°C (Note 5)
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Low RDS(ON) - minimizes conduction losses
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Low VSD - reducing the losses due to body diode conduction
11.7A
10.8A
12.5mΩ @ VGS= 10V
14.8mΩ @ VGS= 4.5V
30V
Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
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Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
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Avalanche rugged – IAR and EAR rated
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Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
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DC-DC Converters
Power management functions
S
D
S
S
G
D
D
D
Top View
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number
DMG4710SSS-13
Case
SO-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
G4710SS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “10” = 2010
1
4
1 of 6
www.diodes.com
November 2010
© Diodes Incorporated
DMG4710SSS
Document number: DS32055 Rev. 6 - 2