Datasheet > DMG4466SSS

DMG4466SSS

更新时间： 2024-11-12 09:54:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	158K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMG4466SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Low Gate Resistance

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Marking Information: See Page 5

•

Ordering Information: See Page 5

Weight: 0.072 grams (approximate)

Qualified to AEC-Q101 Standards for High Reliability

SO-8

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-Source Voltage

±25

T_A= 25°C

T_A= 85°C

Steady

State

Continuous Drain Current (Note 3)

I_D

Pulsed Drain Current (Note 4)

I_DM

I_AR

Avalanche Current (Notes 4 & 5)

Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH

12.8

E_AR

Thermal Characteristics

Characteristic

Symbol

P_D

Value

1.42

Unit

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)

Operating and Storage Temperature Range

88.4

°C/W

°C

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. Device mounted on FR-4 substrate PC board with minimum recommended pad layout in a still air environment @ T_A= 25°C. The value in any given

application depends on the user's specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

5. I_ARand E_ARrating are based on low frequency and duty cycles to keep T_J= 25°C

1 of 6

www.diodes.com

September 2010

DMG4466SSS

Document number: DS32137 Rev. 3 - 2

12 3 4 5 6

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