Datasheet > DMG4800LSD

DMG4800LSD

更新时间： 2024-09-24 09:54:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	142K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMG4800LSD 数据手册

DMG4800LSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram Below

Marking Information: See Page 5

•

Ordering Information: See Page 5

Weight: 0.072 grams (approximate)

D₁

D₂

G₁

G₂

S₁

S₂

TOP VIEW

Internal Schematic

N-Channel MOSFET

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-Source Voltage

±25

_A= 25°C

_A= 70°C

Steady

8.54

6.83

Continuous Drain Current (Note 3)

State

I_D

Pulsed Drain Current (Note 4)

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 3)

Symbol

P_D

Value

1.17

Unit

107

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

1 of 6

www.diodes.com

October 2009

DMG4800LSD

Document number: DS31858 Rev. 3 - 2

12 3 4 5 6

中文翻译

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