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DMG4800LSD-13 PDF预览

DMG4800LSD-13

更新时间: 2024-09-24 09:54:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 142K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMG4800LSD-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:1.61
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:441001Samacsys Pin Count:8
Samacsys Part Category:TransistorSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SO-8Samacsys Released Date:2017-11-09 21:40:44
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.5 A最大漏极电流 (ID):8.54 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.17 W最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DMG4800LSD-13 数据手册

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DMG4800LSD  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low On-Resistance  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram Below  
Marking Information: See Page 5  
Ordering Information: See Page 5  
Weight: 0.072 grams (approximate)  
D1  
D2  
S1  
D1  
G1  
S2  
G2  
D1  
D2  
D2  
G1  
G2  
S1  
S2  
TOP VIEW  
TOP VIEW  
Internal Schematic  
N-Channel MOSFET  
N-Channel MOSFET  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
30  
Unit  
V
VDSS  
VGSS  
Gate-Source Voltage  
±25  
V
T
T
A = 25°C  
A = 70°C  
Steady  
8.54  
6.83  
Continuous Drain Current (Note 3)  
State  
A
A
ID  
Pulsed Drain Current (Note 4)  
42  
IDM  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3)  
Symbol  
PD  
Value  
1.17  
Unit  
W
107  
°C/W  
°C  
Thermal Resistance, Junction to Ambient @TA = 25°C  
Operating and Storage Temperature Range  
RθJA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.  
4. Repetitive rating, pulse width limited by junction temperature.  
1 of 6  
www.diodes.com  
October 2009  
© Diodes Incorporated  
DMG4800LSD  
Document number: DS31858 Rev. 3 - 2  

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