是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 23 weeks |
风险等级: | 1.65 | Samacsys Description: | Diodes Inc DMG3418L-7 N-channel MOSFET Transistor, 4 A, 30 V, 3-Pin SOT-23 |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMG3420U | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG3420U | TYSEMI |
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N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | |
DMG3420U-7 | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG3420U-7 | TYSEMI |
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N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | |
DMG3420UQ | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG3420UQ-7 | TYSEMI |
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N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | |
DMG3N60SJ3 | DIODES |
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Power Field-Effect Transistor, | |
DMG4406LSS | DIODES |
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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet mainta | |
DMG4406LSS | UNITPOWER |
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3A Ultra Low Dropout Linear Regulator | |
DMG4407SSS | DIODES |
获取价格 |
Low On-Resistance |