Datasheet > DMG3415UFY4Q

DMG3415UFY4Q

更新时间： 2024-11-22 14:52:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	380K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

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DMG3415UFY4Q 数据手册

DMG3415UFY4Q

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

39mΩ @ V_GS= -4.5V

52mΩ @ V_GS= -2.5V

-2.5A

-2.1A

Low Input/Output Leakage

ESD Protected Up To 3kV

-16V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)

65mΩ @ V_GS= -1.8V

-1.8A

Description and Applications

Mechanical Data

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.



Case: X2-DFN2015-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020



Backlighting



Power Management Functions

DC-DC Converters

Terminals: Finish  NiPdAu over Copper Leadframe. Solderable

per MIL-STD-202, Method 208



Terminals Connections: See Diagram Below

Weight: 0.008 grams (Approximate)

ESD PROTECTED TO 3kV

Gate Protection

Diode

Top View

Bottom View

Internal Schematic

(Top View)

Equivalent Circuit

Ordering Information (Note 5)

Part Number

DMG3415UFY4Q-7

Case

X2-DFN2015-3

Packaging

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

34P = Marking Code

YM = Date Code Marking

Y = Year (ex: C = 2015)

M = Month (ex: 9 = September)

34P

Date Code Key

Year

Code

2009

2015

2016

2017

2018

2019

2020

2021

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

January 2016

DMG3415UFY4Q

Document number: DS38608 Rev. 1 - 2

12 3 4 5 6

中文翻译

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与DMG3415UFY4Q相关器件

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DMG3415UQ-7	DIODES	获取价格	P-CHANNEL ENHANCEMENT MODE MOSFET
DMG3418L	DIODES	获取价格	Low On-Resistance
DMG3418L_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3418L-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3418L-7	DIODES	获取价格	Small Signal Field-Effect Transistor
DMG3420U	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMG3420U-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance

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