5秒后页面跳转
DMG3415UQ-7 PDF预览

DMG3415UQ-7

更新时间: 2024-11-21 12:28:19
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 222K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

DMG3415UQ-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not RecommendedReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:7.9其他特性:HIGH RELIABILITY
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.0425 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.9 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMG3415UQ-7 数据手册

 浏览型号DMG3415UQ-7的Datasheet PDF文件第2页浏览型号DMG3415UQ-7的Datasheet PDF文件第3页浏览型号DMG3415UQ-7的Datasheet PDF文件第4页浏览型号DMG3415UQ-7的Datasheet PDF文件第5页浏览型号DMG3415UQ-7的Datasheet PDF文件第6页 
DMG3415U  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
Low On-Resistance  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
ID  
V(BR)DSS  
RDS(on) max  
TA = 25°C  
-4.0A  
42.5mΩ @ VGS = -4.5V  
71mΩ @ VGS = -1.8V  
-20V  
-2.0A  
ESD Protected Up To 3kV  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description  
This new generation MOSFET has been designed to minimize the on-  
state resistance (RDS(on)) and yet maintain superior switching  
performance, making it ideal for high efficiency power management  
applications.  
Mechanical Data  
Case: SOT23  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish ۛ Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminals Connections: See Diagram Below  
Weight: 0.008 grams (approximate)  
Applications  
e3  
DC-DC Converters  
Power management functions  
Drain  
SOT23  
D
Gate  
Gate  
Protection  
Diode  
S
G
Source  
Top View  
Top View  
Equivalent Circuit  
ESD PROTECTED TO 3kV  
Internal Schematic  
Ordering Information (Note 4)  
Part Number  
DMG3415U-7  
DMG3415UQ-7  
DMG3415U-13  
Qualification  
Commercial  
Automotive  
Commercial  
Case  
Packaging  
SOT23  
SOT23  
SOT23  
3,000/Tape & Reel  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
34P = Product Type Marking Code  
YW = Date Code Marking  
Y = Year (ex: W = 2009)  
34P  
W = Week (ex: A ~ Z = Weeks 1 ~ 26  
a ~ y = Weeks 27 ~ 51  
z = Weeks 52 and 53)  
DMG3415U-7  
1 of 6  
www.diodes.com  
October 2012  
© Diodes Incorporated  
DMG3415U  
Document number: DS31735 Rev. 9 - 2  

与DMG3415UQ-7相关器件

型号 品牌 获取价格 描述 数据表
DMG3418L DIODES

获取价格

Low On-Resistance
DMG3418L_15 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3418L-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3418L-7 DIODES

获取价格

Small Signal Field-Effect Transistor
DMG3420U DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U TYSEMI

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMG3420U-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420U-7 TYSEMI

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMG3420UQ DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMG3420UQ-7 TYSEMI

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance