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DMA56105

更新时间： 2024-11-06 21:21:35
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
4页 436K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

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DMA56105 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：unknown
风险等级：5.76最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：160JESD-30 代码：R-PDSO-F5
元件数量：2端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

DMA56105 数据手册

 浏览型号DMA56105的Datasheet PDF文件第2页浏览型号DMA56105的Datasheet PDF文件第3页浏览型号DMA56105的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA56105  
Silicon PNP epitaxial planar type  
For digital circuits  
DMA26105 in SMini5 type package  
Features  
ꢀPackage  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini5-F3-B  
ꢀPin Name  
1: Base (Tr1)  
4: Collector (Tr2)  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
ꢀBasic Part Number  
Dual DRA2114T (Common emitter)  
ꢀMarking Symbol: K1  
ꢀInternal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
ꢀAbsolute Maximum Ratings T = 25°C  
a
Tr1  
Tr2  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
R1  
R1  
–50  
V
1
2
3
–100  
mA  
mW  
°C  
(B1) (E) (B2)  
Total power dissipation  
PT  
150  
Resistance value  
R1  
10  
kΩ  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.01  
460  
µA  
µA  
mA  
VCE = –10 V, IC = –5 mA  
160  
hFE  
(Small/Large)  
hFE ratio *  
VCE = –10 V, IC = –5 mA  
0.50  
0.99  
10  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
V
–1.2  
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
R1  
– 0.4  
V
Input resistance  
–30%  
+30%  
kΩ  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: November 2010  
Ver. BED  
1
1234

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