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DMA5610H PDF预览

DMA5610H

更新时间: 2024-11-24 21:05:35
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
4页 434K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

DMA5610H 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:5Reach Compliance Code:unknown
风险等级:5.7最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F5
元件数量:2端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

DMA5610H 数据手册

 浏览型号DMA5610H的Datasheet PDF文件第2页浏览型号DMA5610H的Datasheet PDF文件第3页浏览型号DMA5610H的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA5610H  
Silicon PNP epitaxial planar type  
For digital circuits  
DMA2610H in SMini5 type package  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Code  
SMini5-F3-B  
Pin Name  
1: Base (Tr1)  
4: Collector (Tr2)  
Basic Part Number  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
Dual DRA2123Y (Common emitter)  
Marking Symbol: R4  
Internal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
Tr1  
Tr2  
R2  
R2  
–50  
V
R1  
R1  
–100  
mA  
mW  
°C  
1
2
3
(B1) (E) (B2)  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
R1  
2.2  
10  
kΩ  
kΩ  
Resistance value  
R2  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
–1.0  
µA  
µA  
mA  
VCE = –10 V, IC = –5 mA  
30  
hFE  
(Small/Large)  
hFE ratio *  
VCE = –10 V, IC = –5 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
V
–1.1  
Input voltage (OFF)  
Input resistance  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.5  
+30%  
0.27  
V
R1  
–30%  
0.17  
2.2  
kΩ  
Resistance ratio  
R1 / R2  
0.22  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: November 2010  
Ver. BED  
1

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