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DMA5640M

更新时间： 2024-11-06 19:59:39
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
3页 424K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

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DMA5640M 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
风险等级：5.76最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

DMA5640M 数据手册

 浏览型号DMA5640M的Datasheet PDF文件第2页浏览型号DMA5640M的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA5640M  
Silicon PNP epitaxial planar type  
For digital circuits  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini6-F3-B  
Package dimension clicks here.→  
Click!  
ꢀBasic Part Number  
ꢀPin Name  
Dual DRA2123J (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Packaging  
3: Collector (Tr2)  
DMA5640M0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
ꢀMarking Symbol: S3  
ꢀAbsolute Maximum Ratings T = 25°C  
a
ꢀInternal Connection  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
(C1) (B2) (E2)  
6
5
4
–50  
V
R1  
R2  
Tr1  
–100  
mA  
mW  
°C  
Tr2  
3
R2  
R1  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
1
2
(E1) (B1) (C2)  
Storage temperature  
T
stg  
–55 to +150  
°C  
R1  
2.2  
47  
kΩ  
kΩ  
Resistance value  
R2  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
80  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–1.2  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.4  
+30%  
0.057  
V
Input resistance  
R1  
–30%  
0.037  
2.2  
kΩ  
Resistance ratio  
R1 / R2  
0.047  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2012  
Ver. CED  
1
123

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