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DMA96101 PDF预览

DMA96101

更新时间: 2024-11-06 19:20:39
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
3页 422K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, 5 PIN

DMA96101 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknown风险等级:5.77
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):35
JESD-30 代码:R-PDSO-F5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.125 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

DMA96101 数据手册

 浏览型号DMA96101的Datasheet PDF文件第2页浏览型号DMA96101的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA96101  
Silicon PNP epitaxial planar type  
For digital circuits  
DMA56101 in SSMini5 type package  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Code  
SSMini5-F4-B  
Package dimension clicks here.→  
Click!  
Basic Part Number  
Pin Name  
Dual DRA2114E (Common emitter)  
1: Base (Tr1)  
4: Collector (Tr2)  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
Packaging  
DMA961010R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
Marking Symbol: E0  
Internal Connection  
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
(C1)  
5
(C2)  
4
–50  
V
Tr1  
Tr2  
–100  
mA  
mW  
°C  
R2  
R2  
Total power dissipation  
PT  
125  
R1  
R1  
Junction temperature  
Tj  
150  
1
2
3
(B1) (E) (B2)  
Storage temperature  
T
stg  
–55 to +150  
°C  
R1  
10  
10  
kΩ  
kΩ  
Resistance value  
R2  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.5  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
35  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–2.1  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
10  
kΩ  
Resistance ratio  
R1 / R2  
1.0  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2012  
Ver. CED  
1

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