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DMA564030R PDF预览

DMA564030R

更新时间： 2024-11-20 21:21:15
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 632K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN

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DMA564030R 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：7.99Samacsys Description：DMA564030R, Dual Digital Transistor, PNP -100 mA -50 V 47 kΩ, Ratio Of 1, 6-Pin SMini6 F3 B
其他特性：BUILT IN BIAS RESISITANCE RATIO 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.15 W
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DMA564030R 数据手册

 浏览型号DMA564030R的Datasheet PDF文件第2页浏览型号DMA564030R的Datasheet PDF文件第3页浏览型号DMA564030R的Datasheet PDF文件第4页 
DMA56403  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuits  
DMA26403 in SMini6 type package  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
ꢀMarking Symbol: H0  
ꢀBasic Part Number  
Dual DRA2144E (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
SMini6-F3-B  
SC-113DB  
Packaging  
DMA564030R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
JEITA  
ꢀAbsolute Maximum Ratings Ta = 25°C  
Code  
SOT-363  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
(C1) (B2) (E2)  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
6
5
4
Tr1  
Tr2  
–50  
V
R1  
R2  
Tr1  
–100  
mA  
mW  
°C  
Tr2  
R1  
R2  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
1
2
3
Overall  
(E1) (B1) (C2)  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
°C  
R1  
47  
47  
kΩ  
kΩ  
T
stg  
°C  
Resistance value  
R2  
ꢀElectrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.1  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
80  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–3.6  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.8  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
47  
kΩ  
Resistance ratio  
R1 / R2  
1.0  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: September 2013  
Ver. EED  
1
1234

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