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DMA564070R PDF预览

DMA564070R

更新时间: 2024-11-06 19:03:35
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 633K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN

DMA564070R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:8.03
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMA564070R 数据手册

 浏览型号DMA564070R的Datasheet PDF文件第2页浏览型号DMA564070R的Datasheet PDF文件第3页浏览型号DMA564070R的Datasheet PDF文件第4页 
DMA56407  
Silicon PNP epitaxial planar type  
For digital circuits  
Unit: mm  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: N6  
Basic Part Number  
Dual DRA2124T (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
SMini6-F3-B  
SC-113DB  
Packaging  
DMA564070R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
JEITA  
Absolute Maximum Ratings Ta = 25°C  
Code  
SOT-363  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
(C1) (B2) (E2)  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
6
5
4
Tr1  
Tr2  
–50  
V
R1  
–100  
mA  
mW  
°C  
Tr1  
Tr2  
R1  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
1
2
3
Overall  
(E1) (B1) (C2)  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
°C  
Resistance value  
R1  
22  
kΩ  
T
stg  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
µA  
µA  
mA  
V
– 0.01  
460  
VCE = –10 V, IC = –5 mA  
160  
–1.8  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
R1  
– 0.4  
V
Input resistance  
–30%  
22  
+30%  
kΩ  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: September 2013  
Ver. DED  
1

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