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DMA5610M

更新时间： 2024-11-24 20:11:15
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
4页 437K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

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DMA5610M 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：unknown
风险等级：5.71最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F5
元件数量：2端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

DMA5610M 数据手册

 浏览型号DMA5610M的Datasheet PDF文件第2页浏览型号DMA5610M的Datasheet PDF文件第3页浏览型号DMA5610M的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA5610M  
Silicon PNP epitaxial planar type  
For digital circuits  
DMA2610M in SMini5 type package  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini5-F3-B  
ꢀPin Name  
1: Base (Tr1)  
4: Collector (Tr2)  
ꢀBasic Part Number  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
Dual DRA2123J (Common emitter)  
ꢀMarking Symbol: S1  
ꢀInternal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
Tr1  
Tr2  
R2  
R2  
–50  
V
R1  
R1  
–100  
mA  
mW  
°C  
1
2
3
(B1) (E) (B2)  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
R1  
2.2  
47  
kΩ  
kΩ  
Resistance value  
R2  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
µA  
µA  
mA  
VCE = –10 V, IC = –5 mA  
80  
hFE  
(Small/Large)  
hFE ratio *  
VCE = –10 V, IC = –5 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
V
–1.2  
Input voltage (OFF)  
Input resistance  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.4  
+30%  
0.057  
V
R1  
–30%  
0.037  
2.2  
kΩ  
Resistance ratio  
R1 / R2  
0.047  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: November 2010  
Ver. BED  
1
1234

中文翻译

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