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DMA56106

更新时间： 2024-11-20 21:22:31
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
4页 434K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

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DMA56106 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：unknown风险等级：5.76
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-F5元件数量：2
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

DMA56106 数据手册

 浏览型号DMA56106的Datasheet PDF文件第2页浏览型号DMA56106的Datasheet PDF文件第3页浏览型号DMA56106的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA56106  
Silicon PNP epitaxial planar type  
For digital circuits  
DMA26106 in SMini5 type package  
Features  
ꢀPackage  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini5-F3-B  
ꢀPin Name  
1: Base (Tr1)  
4: Collector (Tr2)  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
ꢀBasic Part Number  
Dual DRA2143T (Common emitter)  
ꢀMarking Symbol: L4  
ꢀInternal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
ꢀAbsolute Maximum Ratings T = 25°C  
a
Tr1  
Tr2  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
R1  
R1  
–50  
V
1
2
3
–100  
mA  
mW  
°C  
(B1) (E) (B2)  
Total power dissipation  
PT  
150  
Resistance value  
R1  
4.7  
kΩ  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.01  
460  
µA  
µA  
mA  
VCE = –10 V, IC = –5 mA  
160  
hFE  
(Small/Large)  
hFE ratio *  
VCE = –10 V, IC = –5 mA  
0.50  
0.99  
4.7  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
V
–1.0  
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
R1  
– 0.4  
V
Input resistance  
–30%  
+30%  
kΩ  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: November 2010  
Ver. BJD  
1
1234

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