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DM74LS170WMX PDF预览

DM74LS170WMX

更新时间: 2024-09-15 21:19:51
品牌 Logo 应用领域
德州仪器 - TI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
6页 124K
描述
4X4 STANDARD SRAM, 35ns, PDSO16, 0.300 INCH, PLASTIC, SOIC-16

DM74LS170WMX 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:35 nsJESD-30 代码:R-PDSO-G16
长度:10.3 mm内存密度:16 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:16字数:4 words
字数代码:4工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4X4输出特性:OPEN-COLLECTOR
可输出:NO封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:2.65 mm
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:TTL温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:7.5 mm
Base Number Matches:1

DM74LS170WMX 数据手册

 浏览型号DM74LS170WMX的Datasheet PDF文件第2页浏览型号DM74LS170WMX的Datasheet PDF文件第3页浏览型号DM74LS170WMX的Datasheet PDF文件第4页浏览型号DM74LS170WMX的Datasheet PDF文件第5页浏览型号DM74LS170WMX的Datasheet PDF文件第6页 
January 1992  
DM74LS170  
4 x 4 Register File with Open-Collector Outputs  
General Description  
The ’LS170 contains 16 high speed, low power, transparent  
Features  
Y
Simultaneous read/write operation  
Y
D-type latches arranged as four words of four bits each, to  
c
Expandable to 512 words of n-bits  
Y
function as a 4  
4 register file. Separate read and write  
Typical access time of 20 ns  
inputs, both address and enable, allow simultaneous read  
and write operation. Open-collector outputs make it possible  
to connect up to 128 outputs in a wired-AND configuration  
to increase the word capacity up to 512 words. Any number  
of these devices can be operated in parallel to generate an  
n-bit length. The ’670 provides a similar function to this de-  
Y
Low leakage open-collector outputs for expansion  
vice but it features TRI-STATE outputs.  
É
Connection Diagram  
Logic Symbol  
Dual-In-Line Package  
TL/F/9820–2  
e
e
V
CC  
GND  
Pin 16  
Pin 8  
TL/F/9820–1  
Order Number DM74LS170WM or DM74LS170N  
See NS Package Number M16B or N16E  
Pin Names  
Description  
D1D4  
WA0WA1  
WE  
Data Inputs  
Write Address Inputs  
Write Enable Input (Active LOW)  
Read Address Inputs  
RA0, RA1  
RE  
Read Enable Input (Active LOW)  
Data Outputs  
O1O4  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/F/9820  
RRD-B30M115/Printed in U. S. A.  

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