Datasheet > DF2S8.2CT(TPL3)

DF2S8.2CT(TPL3)

更新时间： 2024-11-05 19:51:43

品牌	Logo	应用领域
东芝 - TOSHIBA		测试二极管
页数	文件大小	规格书
3页	111K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,8.2V V(Z),6.1%,SOD-882

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DF2S8.2CT(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.8	配置：	SINGLE
二极管类型：	ZENER DIODE	最大动态阻抗：	30 Ω
元件数量：	1	最高工作温度：	150 °C
最大功率耗散：	0.15 W	标称参考电压：	8.2 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
最大电压容差：	6.1%	工作测试电流：	5 mA
Base Number Matches：	1

DF2S8.2CT(TPL3) 数据手册

DF2S8.2CT

TOSHIBA Diodes for Protecting against ESD

DF2S8.2CT

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

Unit in mm

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

z 2 terminal ultra small package suitable for mounting on small space.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Symbol

Rating

Unit

150*

150

°C

Junction temperature

Storage temperature range

stg

−55~150

°C

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

CST2

JEDEC

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

―

JEITA

1-1P1A

TOSHIBA

Weight: 0.7 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Zener voltage

Symbol

Test Condition

= 5 mA

Min

Typ.

Max

Unit

7.7

―

8.2

―

8.7

Ω

Dynamic impedance

Reverse current

= 5 mA

= 6.5 V

―

0.5

μA

Terminal capacitance

―

= 0 V, f = 1 MHz

Guaranteed Level of Esd Immunity

Test Condition

ESD Immunity Level

±30 kV

IEC61000-4-2

(Contact discharge)

Criterion: No damage to device elements

Marking

Equivalent Circuit (top view)

2009-01-19

12 3

中文翻译

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与DF2S8.2CT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
DF2S8.2FS	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF2S8.2FS(TPL3)	TOSHIBA	获取价格	ZENER DIODE,SINGLE, TWO TERMINAL,8.2V V(Z),6.1%,EMD2VAR
DF2S8.2FS,L3M(T	TOSHIBA	获取价格	Zener Diode, 8.2V V(Z), 6.1%, Silicon, Unidirectional
DF2S8.2S	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD).
DF2S8.2SC(TPL3)	TOSHIBA	获取价格	ZENER DIODE,SINGLE, TWO TERMINAL,8.2V V(Z),6%,SMT
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