Datasheet > DF2S5.6ASL,L3F(T

DF2S5.6ASL,L3F(T

更新时间： 2024-02-13 22:32:22

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
6页	143K
描述
Zener Diode

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技术参数
数据手册

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DF2S5.6ASL,L3F(T 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	1.56	二极管类型：	ZENER DIODE
Base Number Matches：	1

DF2S5.6ASL,L3F(T 数据手册

DF2S5.6CT

ESD Protection Diodes Silicon Epitaxial Planar

DF2S5.6CT

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Packaging and Internal Circuit

1: Cathode

2: Anode

CST2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

VESD

±30

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-08

2014-04-15

Rev.4.0

12 3 4 5 6

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