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DE3S062D0L PDF预览

DE3S062D0L

更新时间: 2024-11-11 14:48:59
品牌 Logo 应用领域
松下 - PANASONIC 测试光电二极管
页数 文件大小 规格书
4页 324K
描述
Zener Diode, 6.2V V(Z), 5%, 0.15W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN

DE3S062D0L 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-89包装说明:SC-89, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.75配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.15 W
标称参考电压:6.2 V表面贴装:YES
技术:ZENER端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:1 mABase Number Matches:1

DE3S062D0L 数据手册

 浏览型号DE3S062D0L的Datasheet PDF文件第2页浏览型号DE3S062D0L的Datasheet PDF文件第3页浏览型号DE3S062D0L的Datasheet PDF文件第4页 
Doc No. TT4-EA-12736  
Revision. 2  
Zener Diode  
DE3S062D0L  
DE3S062D0L  
Silicon epitaxial planar type  
Unit: mm  
For ESD protection  
1.6  
0.26  
0.13  
3
Features  
High ESD  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
0.7  
Marking Symbol:  
Packaging  
41  
(0.5)(0.5)  
1.0  
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)  
1. Cathode1  
2. Cathode2  
3. Anode1,2  
Absolute Maximum Ratings Ta = 25 C  
Panasonic  
JEITA  
SSMini3-F3-B  
SC-89  
SOT-490  
Parameter  
Symbol  
PT  
Rating  
150  
±30  
Unit  
mW  
kV  
Total power dissipation *1  
Electrostatic discharge *2  
Junction temperature  
Code  
ESD  
Tj  
150  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
Internal Connection  
Note)  
PT = 150 mW achieved with a printed circuit board.  
( 2 Diode total )  
*1:  
3
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)  
*2:  
1
2
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VZ  
Conditions  
Min Typ Max  
Unit  
V
μA  
Zener voltage *1, *2  
IZ = 1 mA  
VR = 4 V  
5.89  
6.51  
Reverse current  
IR  
1.0  
Terminal Capacitance  
Temperature coefficient of zener voltage *3  
Ct  
SZ  
VR = 0 V, f = 1 MHz  
IZ = 1 mA  
55  
2.3  
pF  
mV/°C  
Note)  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.  
1.  
2. *1: The temperature must be controlled 25°C for VZ mesurement.  
VZ value measured at other temperature must be adjusted to VZ (25°C)  
*2: VZ guaranted 20 ms after current flow.  
*3: Tj = 25°C to 150°C  
Page 1 of 3  
Established : 2010-09-01  
Revised : 2013-10-28  

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