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DE475-102N21A PDF预览

DE475-102N21A

更新时间: 2024-01-20 14:23:18
品牌 Logo 应用领域
IXYS 晶体射频场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 175K
描述
RF Power MOSFET

DE475-102N21A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):24 A最大漏极电流 (ID):24 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-F6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1800 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DE475-102N21A 数据手册

 浏览型号DE475-102N21A的Datasheet PDF文件第2页浏览型号DE475-102N21A的Datasheet PDF文件第3页浏览型号DE475-102N21A的Datasheet PDF文件第4页 
DE475-102N21A  
RF Power MOSFET  
N-Channel Enhancement Mode  
Low Qg and Rg  
VDSS  
ID25  
RDS(on)  
= 1000 V  
High dv/dt  
Nanosecond Switching  
=
=
24 A  
30MHz Maximum Frequency  
0.41 Ω  
Symbol  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
Continuous  
Maximum Ratings  
1000  
1000  
V
V
VDSS  
VDGR  
VGS  
PDC  
= 1800W  
±20  
±30  
24  
V
V
Transient  
VGSM  
ID25  
IDM  
Tc = 25°C  
A
Tc = 25°C, pulse width limited by TJM  
144  
21  
A
Tc = 25°C  
Tc = 25°C  
A
IAR  
30  
mJ  
V/ns  
EAR  
IS IDM, di/dt 100A/µs, VDD VDSS  
,
5
Tj 150°C, RG = 0.2Ω  
dv/dt  
IS = 0  
>200 V/ns  
1800  
730  
W
W
PDC  
PDHS  
DRAIN  
Tc = 25°C  
GATE  
Derate 4.0W/°C above 25°C  
Tc = 25°C  
4.5  
W
PDAMB  
RthJC  
RthJHS  
0.08 C/W  
0.20 C/W  
SG1 SG2  
SD1  
SD2  
Features  
Isolated Substrate  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified  
high isolation voltage (>2500V)  
excellent thermal transfer  
min.  
1000  
2.5  
typ.  
max.  
Increased temperature and power  
cycling capability  
VGS = 0 V, ID = 3 ma  
VDS = VGS, ID = 4 ma  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 VDSS TJ = 25°C  
V
V
VDSS  
VGS(th)  
IGSS  
IXYS advanced low Qg process  
Low gate charge and capacitances  
5.5  
easier to drive  
faster switching  
±100 nA  
Low RDS(on)  
Very low insertion inductance (<2nH)  
50  
IDSS  
µA  
V
GS = 0  
TJ = 125°C  
1
mA  
No beryllium oxide (BeO) or other haz-  
VGS = 15 V, ID = 0.5ID25  
0.41  
RDS(on)  
ardous materials  
Pulse test, t 300µS, duty cycle d 2%  
Advantages  
VDS = 15 V, ID = 0.5ID25, pulse test  
27  
S
gfs  
Optimized for RF and high speed  
switching at frequencies to 30MHz  
-55  
-55  
+175  
+175  
°C  
°C  
°C  
°C  
g
TJ  
Easy to mount—no insulators needed  
High power density  
175  
TJM  
Tstg  
TL  
1.6mm (0.063 in) from case for 10 s  
300  
3
Weight  

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