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DCP51-16-13 PDF预览

DCP51-16-13

更新时间： 2024-10-03 10:01:11
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 185K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DCP51-16-13 数据手册

 浏览型号DCP51-16-13的Datasheet PDF文件第2页浏览型号DCP51-16-13的Datasheet PDF文件第3页浏览型号DCP51-16-13的Datasheet PDF文件第4页 
DCP51/-16  
PNP SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
Epitaxial Planar Die Construction  
Complementary NPN Type Available (DCP54)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification  
Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
3
2
1
4
•
•
SOT-223  
Mechanical Data  
COLLECTOR  
•
•
Case: SOT-223  
2,4  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
3 E  
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish − Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
2 C  
C 4  
1
BASE  
B
1
3
•
•
•
•
Terminal Connections: See Diagram  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
EMITTER  
TOP VIEW  
Schematic and Pin Configuration  
Weight: 0.115 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-45  
-45  
-5  
-1.5  
-1  
Unit  
V
V
V
A
A
IC  
Thermal Characteristics  
Characteristic  
Power Dissipation @ TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
Symbol  
Pd  
Value  
1 (Note 3)  
-55 to +150  
Unit  
W
Tj,TSTG  
°C  
125  
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)  
°C/W  
Rθ  
JA  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
-45  
-45  
-5  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-100  
-10  
IC = -100μA, IE = 0A  
IC = -10mA, IB = 0A  
IE = -10μA, IC = 0A  
VCB = -30V, IE = 0A  
CB = - 30V, IE = 0A, TA = 150°C  
VEB = -5V, IC = 0A  
nA  
μA  
μA  
⎯
⎯
⎯
Collector Cut-Off Current  
ICBO  
IEBO  
V
Emitter Cut-Off Current  
-10  
⎯
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
-0.5  
-1.0  
V
V
VCE(SAT)  
VBE(ON)  
⎯
⎯
⎯
⎯
IC = -500mA, IB = -50mA  
IC = -500mA, VCE = -2V  
250  
⎯
250  
I
C = -150mA, VCE = -2V  
40  
25  
hFE  
⎯
⎯
DC Current Gain  
DCP51-16  
SMALL SIGNAL CHARACTERISTICS  
⎯
IC = -500mA, VCE = -2V  
I
100  
C = -150mA, VCE = -2V  
C = -50mA, VCE = -5V,  
I
Transition Frequency  
200  
MHz  
fT  
⎯
⎯
f = 100MHz  
Note:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on  
our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%  
DS31196 Rev. 2 - 2  
1 of 4  
DCP51/-16  
© Diodes Incorporated  
www.diodes.com  
1234

中文翻译

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DCP51-16-13 替代型号

型号 品牌 替代类型 描述 数据表
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