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DCP54-13 PDF预览

DCP54-13

更新时间： 2024-10-03 10:01:11
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 202K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DCP54-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：19 weeks
风险等级：5.74外壳连接：COLLECTOR
最大集电极电流 (IC)：1 A集电极-发射极最大电压：45 V
配置：SINGLE最小直流电流增益 (hFE)：40
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

DCP54-13 数据手册

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DCP54/-16  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary PNP Type Available (DCP51)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
2,4  
3 E  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
2 C  
C
4
1
BASE  
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
B
1
3
EMITTER  
TOP VIEW  
•
•
•
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
45  
45  
5
Unit  
V
Collector-Base Voltage  
V
Emitter-Base Voltage  
V
Continuous Collector Current  
1
A
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
1
W
Power Dissipation (Note 3) @TA = 25°C  
Pd  
Operating and Storage Temperature Range  
-55 to +150  
125  
°C  
Tj, TSTG  
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)  
°C/W  
Rθ  
JA  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Off Characteristics (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IC = 100μA  
45  
45  
5
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
⎯
⎯
⎯
IC = 10mA  
IE = 10μA  
nA  
μA  
μA  
100  
10  
V
V
CB = 30V, IE = 0  
CB = 30V, IE = 0, TA = 150°C  
Collector-Base Cutoff Current  
ICBO  
IEBO  
⎯
⎯
⎯
⎯
Emitter-Base Cutoff Current  
10  
VEB = 5V, IC = 0A  
On Characteristics (Note 4)  
IC = 5mA, VCE = 2V  
IC = 150mA, VCE = 2V  
IC = 500mA, VCE = 2V  
IC = 150mA, VCE = 2V  
IC = 500mA, IB = 50mA  
IC = 500mA, VCE = 2V  
63  
63  
40  
⎯
250  
⎯
250  
500  
1
hFE  
⎯
DC Current Gain  
⎯
100  
⎯
⎯
⎯
⎯
⎯
DCP54-16  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
mV  
V
VCE(SAT)  
VBE(ON)  
Small Signal Characteristics  
Transition Frequency  
200  
MHz  
fT  
⎯
⎯
IC = 50mA, VCE = 5V, f = 100MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%  
DS30816 Rev. 5 - 2  
1 of 4  
DCP54/-16  
© Diodes Incorporated  
www.diodes.com  
1234

中文翻译

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